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1 memory all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301- www.maxwell.com 4 megabit (512k x 8-bit) eeprom mcm 79c0408 ?2002 maxwell technologies all rights reserved. 08.15.02 rev 12 ? four 128k x 8-bi t eeproms mcm ?r ad -p ak ? radiation-hardened agains t natural space radia- tion ? total dose hardness (rp package): - > 100 krad (si) - dependent upon orbit ? excellent single event effects - sel > 120 mev/mg/cm 2 - seu > 90 mev/mg/cm 2 read mode - seu = 18 mev/mg/cm 2 write mode ? packages: ? -40 pin r ad -p ak ? flat pack ? -40 pin x-r ay p ak tm flat pack ? -40 pin rad-tolerant flat pack ? high speed: - 120, 150, and 200 ns maximum access times available ?data polling and ready/busy signal ? software data protection ? write protection by res pin ? high endurance - 10,000 erase/write (in page mode), 10 year data reten- tion ? page write mode: 1 to 128 byte page ? low power dissipation - 88 mw/mhz active mode - 440 w standby mode d escription : maxwell technologies? 79c0408 multi-chip module (mcm) memory features a greater than 100 krad (si) total dose toler- ance, dependent upon orbit. using maxwell technologies? pat- ented radiation-hardened r ad -p ak ? mcm packaging technology, the 79c0408 is t he first radiation-hardened 4 megabit mcm eeprom for spac e applications. the 79c0408 uses four 1 megabit high-speed cmos die to yield a 4 mega- bit product. the 79c0408 is capabl e of in-system electrical byte and page programmability. it has a 128 bytes page pro- gramming function to make its erase and write operations faster. it also features data polling and a ready/busy signal to indicate the completion of erase and programming operations. in the 79c0408, hardware data protection is provided with the res pin, in addition to noise protection on the we signal and write inhibit on power on and of f. software data protection is implemented using the jedec optional standard algorithm. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shie lding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding fo r a lifetime in orbit or space mission. in a geo orbit, r ad -p ak provides greater than 100 krad (si) radiation dose toleranc e. this product is available with screening up to class k. 128k x 8 128k x 8 128k x 8 128k x 8 i/o 0-7 a 0-16 we r/ b res oe ce 1 ce 2 ce 3 ce 4 f eatures :
memory 2 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 1. v in min = -3.0v for pulse width < 50 ns . t able 1. 79c0408 p in d escription p in s ymbol d escription 16-9, 32-31, 28, 30, 8, 33, 7, 36, 6 a0 to a16 address input 17-19, 22-26 i/o0 to i/o7 data input/output 29 oe output enable 2, 3, 39, 38 ce1-4 chip enable 1 through 4 34 we write enable 1, 27, 40 vcc power supply 4, 20, 21, 37 vss ground 5rdy/busy ready/busy 35 res reset t able 2. 79c0408 a bsolute m aximum r atings p arameter s ymbol m in m ax u nit supply voltage v cc -0.6 7.0 v input voltage v in -0.5 1 7.0 v operating temperature range t opr -55 125 c storage temperature range t stg -65 150 c t able 3. 79c0408 r ecommended o perating c onditions p arameter s ubgroups s ymbol m in m ax u nit supply voltage 1 v cc 4.5 5.5 v input voltage res _pin 1v il v ih v h -0.3 1 2.2 v cc -0.5 1. v il min = -1.0v for pulse width < 50 ns 0.8 v cc +0.3 v cc +1 v v v case operating temperature 1 t c -55 125 c
memory 3 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 t able 4. 79c0408 c apacitance 1 (t a = 25 c, f = 1 mhz) 1. guaranteed by design. p arameter s ymbol m in m ax u nit input capacitance: v in = 0 v 2 we ce 1-4 oe a 0-16 2. guaranteed by design. c in -- -- -- -- 24 6 24 24 pf output capacitance: v out = 0 v 2 c out 48 pf t able 5. 79c0408 dc e lectrical c haracteristics (v cc = 5v 10%, t a = -55 to +125c) p arameter t est c ondition s ubgroups s ymbol m in m ax u nits input leakage current v cc = 5.5v, v in = 5.5v 1 1, 2, 3 i il a ce 1-4 1, 2, 3 -- 2 1 1. i li on res = 100 ua max. oe , we 1-4 1, 2, 3 -- 4 a 0-16 1, 2, 3 -- 4 output leakage current v cc = 5.5v, v out = 5.5v/0.4v 1, 2, 3 i lo -- 2 a standby v cc current 2 2. one ce active. ce = v cc 1, 2, 3 i cc1 -- 20 a ce = v ih 1, 2, 3 i cc2 -- 1 ma operating v cc current i out = 0ma, duty = 100% cycle = 1s at v cc = 5.5v 1, 2, 3 i cc3 -- 15 ma i out = 0ma, duty = 100% cycle = 150ns at v cc = 5.5v 1, 2, 3 -- 50 input voltage res _pin 1, 2, 3 v il -- 0.8 v 1, 2, 3 v ih 2.2 -- 1, 2, 3 v h v cc -0.5 -- output voltage i ol = 2.1 ma 1, 2, 3 v ol -- 0.4 v i oh = -0.4 ma 1, 2, 3 v oh 2.4 --
memory 4 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 t able 6. 79c0408 ac e lectrical c haracteristics for r ead o perations 1 (v cc = 5v 10%, t a = -55 to +125c) 1. test conditions: input pulse levels - 0.4v to 2.4v; input rise and fall times < 20ns; output load - 1 ttl gate + 100pf (inclu ding scope and jig); reference levels for measuring timing - 0.8v/1.8v. p arameter s ubgroups s ymbol m in m ax u nit address access time ce = oe = v il , we = v ih -120 -150 -200 9, 10, 11 t acc -- -- -- 120 150 200 ns chip enable access time oe = v il , we = v ih -120 -150 -200 9, 10, 11 t ce -- -- -- 120 150 200 ns output enable access time ce = v il , we = v ih -120 -150 -200 9, 10, 11 t oe 0 0 0 75 75 125 ns output hold to address change ce = oe = v il , we = v ih -120 -150 -200 9, 10, 11 t oh 0 0 0 -- -- -- ns output disable to high-z 2 ce = v il , we = v ih -120 -150 -200 2. t df and t dfr are defined as the time at which the output becomes an open circuit and data is no longer driven. 9, 10, 11 t df 0 0 0 50 50 60 ns ce = oe = v il , we = v ih -120 -150 -200 9, 10, 11 t dfr 0 0 0 300 350 450 res to output delay ce = oe = v il , we = v ih 3 -120 -150 -200 3. guaranteed by design. t rr -- -- -- 400 450 650 ns
memory 5 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 t able 7. 79c0408 ac e lectrical c haracteristics for w rite o perations (v cc = 5v 10%, t a = -55 to +125c) p arameter s ubgroups s ymbol m in 1 m ax u nit address setup time -120 -150 -200 9, 10, 11 t as 0 0 0 -- -- -- ns chip enable to write setup time (we controlled) -120 -150 -200 9, 10, 11 t cs 0 0 0 -- -- -- ns write pulse width ce controlled -120 -150 -200 we controlled -120 -150 -200 9, 10, 11 t cw t wp 200 250 350 200 250 350 -- -- -- -- -- -- ns address hold time -120 -150 -200 9, 10, 11 t ah 150 150 200 -- -- -- ns data setup time -120 -150 -200 9, 10, 11 t ds 75 100 150 -- -- -- ns data hold time -120 -150 -200 9, 10, 11 t dh 10 10 20 -- -- -- ns chip enable hold time (we controlled) -120 -150 -200 9, 10, 11 t ch 0 0 0 -- -- -- ns write enable to write setup time (ce controlled) -120 -150 -200 9, 10, 11 t ws 0 0 0 -- -- -- write enable hold time (ce controlled) -120 -150 -200 9, 10, 11 t wh 0 0 0 -- -- --
memory 6 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 output enable to write setup time -120 -150 -200 9, 10, 11 t oes 0 0 0 -- -- -- ns output enable hold time -120 -150 -200 9, 10, 11 t oeh 0 0 0 -- -- -- ns write cycle time 2 -120 -150 -200 9, 10, 11 t wc -- -- -- 10 10 10 ms data latch time -120 -150 -200 9, 10, 11 t dl 250 300 400 -- -- -- ns byte load window -120 -150 -200 9, 10, 11 t bl 100 100 200 -- -- -- s byte load cycle -120 -150 -200 9, 10, 11 t blc 0.55 0.55 0.95 30 30 30 s time to device busy -120 -150 -200 9, 10, 11 t db 100 120 170 -- -- -- ns write start time 3 -120 -150 -200 9, 10, 11 t dw 150 150 250 -- -- -- ns res to write setup time -120 -150 -200 9, 10, 11 t rp 100 100 200 -- -- -- s v cc to res setup time 4 -120 -150 -200 9, 10, 11 t res 1 1 3 -- -- -- s 1. use this divice in a longer cycle than this value. 2. t wc must be longer than this value unless pol ling techniques or rdy/busy are used. th is device automatica lly completes the internal write operation within this value. t able 7. 79c0408 ac e lectrical c haracteristics for w rite o perations (v cc = 5v 10%, t a = -55 to +125c) p arameter s ubgroups s ymbol m in 1 m ax u nit
memory 7 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f igure 1. r ead t iming w aveform 3. next read or write operation can be initiated after t dw if polling techniques or rdy/busy are used. 4. gauranteed by design. t able 8. 79c0408 m ode s election 1, 2 1. x = don?t care. 2. refer to the recommended dc operating conditions. p arameter ce 3 3. for ce 1-4 only one ce can be used (?on?) at a time. oe we i/o res rdy/busy read v il v il v ih d out v h high-z standby v ih x x high-z x high-z write v il v ih v il d in v h high-z --> v ol deselect v il v ih v ih high-z v h high-z write inhibit x x v ih -- x -- xv il x--x-- data polling v il v il v ih data out (i/o7) v h v ol program x x x high-z v il high-z
memory 8 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f igure 2. b yte w rite t iming w aveform (1) (we c ontrolled )
memory 9 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f igure 3. b yte w rite t iming w aveform (2) (ce c ontrolled )
memory 10 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f igure 4. p age w rite t iming w aveform (1) (we c ontrolled )
memory 11 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) f igure 6. d ata p olling t iming w aveform
memory 12 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f igure 7. s oftware d ata p rotection t iming w aveform (1) ( in protection mode ) f igure 8. s oftware d ata p rotection t iming w aveform (2) ( in non - protection mode ) toggle bit waveform eeprom a pplication n otes this application note describes the programming procedures for each eeprom module (four in each mcm) and details of various techniques to preserve data protection. automatic page write page-mode write feature allows from 1 to 128 bytes of data to be written into the eeprom in a single wr ite cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (a0 to a6). loading the first byte of data, the data load window opens 30 s for the second byte. in the same manner each additional byte of data can be loaded within 30 s. in case ce and we are kept high for 100 s afte r data input, the eeprom enters erase and write mode automatically and only the input data are written into the eeprom.
memory 13 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 we ce pin operation during a write cycle, ad dresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce . data polling data polling function allows the status of the eeprom to be determin ed. if the eeprom is set to read mode during a write cycle, an inversion of the last byte of data to be load ed output is from i/o 7 to in dicate that the eeprom is per- forming a write operation. rdy/busy signal rdy/busy signal also allows a comparison operation to determine the status of the eeprom. the rdy/busy signal has high impedance except in write cycle and is lowered to v ol after the first write signal. at the-end of a write cycle, the rdy/busy signal changes state to high impedance. res signal when res is low, the eeprom cannot be read and programmed. therefore, data can be protected by keeping res low when v cc is switched. res should be kept high during read and programming because it doesn?t provide a latch function. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation.
memory 14 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mis- take. to prevent this phenomenon, the eeprom has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. be careful not to allow noise of a width of more than 20ns on the control pins. 2. data protection at v cc on/off when v cc is turned on or off, noise on the control pins generated by ex ternal circuits, such as cpus, may turn the eeprom to programming mode by mistake. to prevent this unintentional programming, the eeprom must be kept in unprogrammable state during v cc on/off by using a cpu reset signal to res pin. res should be kept at v ss level when v cc is turned on or off. the eeprom br eaks off programming operation when res becomes low, programming operation doesn?t finish correctly in case that res falls low during programming operation. res should be kept high for 10 ms after the last data input. 3. software data protection the software data protection function is to prevent unintentional progr amming caused by noise generat ed by external circuits. in software data protection mode, 3 bytes of data must be input before write data as follows. these bytes can switch the non- protection mode to the protection mode.
memory 15 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 software data protection mode can be canceled by inputting the fo llowing 6 bytes. then, the eeprom turns to the non-protec- tion mode and can write data normally. however, when the data is input in the canceling cycle, the data cannot be written.
memory 16 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f40-01 note: all dimensions in inche 79c0408 r ad -p ak ? p ackage d imensions s ymbol d imension m in n om m ax a 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 d -- 0.850 0.860 e 0.985 0.995 1.005 e1 -- -- 1.025 e2 0.890 0.895 -- e3 0.000 0.050 -- e 0.040 bsc l 0.380 0.390 0.400 q 0.214 0.245 0.270 s1 0.005 0.038 -- n40 pin #1 id
memory 17 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 t able 9. x-r ay p ak p ackage d imensions symbol dimensions a 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 d 0.840 0.850 0.860 e 0.985 0.995 1.005 e2 -- 0.785 -- e3 -- 0.105 -- e 0.040 bsc l 0.340 0.350 0.400 q 0.050 0.065 0.075 s1 -- 0.038 -- n40 e s1 b e3 q a maxwell technolgies xxxxxxxxxxx x-ray-pak yyyy usa d c l e2 e pin 1 note: all dimensions in inches
memory 18 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 f40-02 note: all dimensions in inches t able 10. 40 p in f lat r ad -t olerant p ackage symbol dimension min nom max a 0.202 0.224 0.246 b 0.013 0.015 0.022 c 0.006 0.008 0.010 d -- 0.850 0.860 e 0.985 0.995 1.005 e1 -- -- 1.025 e2 0.890 0.895 -- e3 0.000 0.050 -- e 0.040 bsc l 0.380 0.390 0.400 q 0.190 0.220 0.270 s1 0.000 0.038 -- n40 pin #1 id
memory 19 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) eeprom mcm 79c0408 8.15.02 rev 12 important notice: these data sheets are created using the chip manufacturers published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample test ing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the us e of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies. must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.

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